Influence of te concentration on the infrared cathodoluminescence of GaAs:Te wafers
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.date.accessioned | 2023-06-20T18:57:31Z | |
| dc.date.available | 2023-06-20T18:57:31Z | |
| dc.date.issued | 1991-03-01 | |
| dc.description | © 1991 American institute of Physics. This work was supported by the Comision Interministerial de Ciencia y Tecnologia (Project PB86-015 1) and by DGlCYT-DAAD. The authors thank Wacker-Chemitronic (Dr. K. Liihnert) for providing the samples | |
| dc.description.abstract | Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Comision Interministerial de Ciencia y Tecnologia | |
| dc.description.sponsorship | DGlCYT-DAAD | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/25088 | |
| dc.identifier.doi | 10.1063/1.348636 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.348636 | |
| dc.identifier.relatedurl | http://scitation.aip.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/58998 | |
| dc.issue.number | 5 | |
| dc.journal.title | Journal of Applied Physics | |
| dc.language.iso | eng | |
| dc.page.final | 2779 | |
| dc.page.initial | 2776 | |
| dc.publisher | Amer Inst Physics | |
| dc.relation.projectID | PB86-015 1 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Spatial-Distribution | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Influence of te concentration on the infrared cathodoluminescence of GaAs:Te wafers | |
| dc.type | journal article | |
| dc.volume.number | 69 | |
| dcterms.references | 1. M. Dussac, M. Dupuy, and E. Molva, Defect Recognization and Image Processing in III-V Compounds, edited by J.P. Fillard (Elsevier, Amsterdam, 1985), p. 209. 2. C. A. Warwick and G. T. Brown, Appl. Phys. Lett. 46, 574 (1985). 3. B. Mendez, J. Piqueras, F. Dominguez-Adame, and N. de Diego, J. Appl. Phys. 64, 4466 (1988). 4. E. W. Williams, Phys. Rev. 168, 922 (1968). 5. C. J. Hwang, J. Appl. Phys. 40, 4584 (1969). 6. C. J. Hwang, J. Appl. Phys. 40, 4591 (1969). 7. A. V. Govorkov and L. I. Kolesnik, Sov. Phys. Semicond. 12, 259 (1978). 8. Y. M. Chu, D.B. Darby, and G. R. Booker, Inst. Phys. Conf. Ser. No. 60, 331(1981). 9. D. T. J. Hurle, Inst. Phys. Conf. Ser. 33a, 113 (1977). 10. B. Hughes and G. H. Narayanan, Phys. Status Solidi A 46,627 (1978). 11.A V. Markov, M. G. Milvidskii, and S.S. Shifrin, Sov. Phys. Crystallo&. 29, 205 (1984). | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 |
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