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Influence of te concentration on the infrared cathodoluminescence of GaAs:Te wafers

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http://dx.doi.org/10.1063/1.348636

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1991

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Amer Inst Physics
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https://hdl.handle.net/20.500.14352/58998

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Abstract

Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape.

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© 1991 American institute of Physics. This work was supported by the Comision Interministerial de Ciencia y Tecnologia (Project PB86-015 1) and by DGlCYT-DAAD. The authors thank Wacker-Chemitronic (Dr. K. Liihnert) for providing the samples

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