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Conductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon substrates

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dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorPrado Millán, Álvaro Del
dc.contributor.authorSan Andrés Serrano, Enrique
dc.date.accessioned2023-06-20T10:44:37Z
dc.date.available2023-06-20T10:44:37Z
dc.date.issued2004-01
dc.description© 2004 The Japan Society of Applied Physics. The authors would like to thank C.A.I. de Implantación Iònica from Complutense University in Madrid for technical assistance with the ECR-PECVD system. This research was partially supported by the Spanish DGESIC under grant nos. TIC 1FD97-2085 and TIC 01/1253.
dc.description.abstractAn interface quality comparative study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiO(x)Ny dielectric films deposited on silicon substrates by electron-cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) has been carried out. Overall interpretation of deep-level transient spectroscopy (DLTS) and conductance transient (G-t) measurements enables us to conclude that the interface quality of Al/SiOxNy/Si MIS structures is superior to those of Al/SiNx/Si devices. Moreover,. we have proved that thermal treatments applied to Al/SiOxNy/Si capacitors induce defect passivation, possibly related to the presence of hydrogen in the films, and disorder-induced gap-state (DIGS) density maxima can decrease to values even lower than those corresponding to Al/SiNx/SiO2/Si devices.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipSpanish DGESIC
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26101
dc.identifier.doi10.1143/JJAP.43.66
dc.identifier.issn0021-4922
dc.identifier.officialurlhttp://dx.doi.org/10.1143/JJAP.43.66
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51126
dc.issue.number1
dc.journal.titleJapanese Journal of Applied Physics Part-1: Regular Papers Short Notes & Review Papers
dc.language.isoeng
dc.page.final70
dc.page.initial66
dc.publisherInst. Pure Applied Physics
dc.relation.projectIDTIC 1FD97-2085
dc.relation.projectIDTIC 01/1253
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordInsulator-Semiconductor Structures
dc.subject.keywordInduced Gap States
dc.subject.keywordC-V Curves
dc.subject.keywordQuality
dc.subject.keywordOxide
dc.subject.keywordOxynitride
dc.subject.keywordDevices.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleConductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon substrates
dc.typejournal article
dc.volume.number43
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