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Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric

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dc.contributor.authorGao, Z.
dc.contributor.authorRomero, M.F.
dc.contributor.authorPampillón Arce, María Ángela
dc.contributor.authorSan Andrés Serrano, Enrique
dc.contributor.authorCalle, F.
dc.date.accessioned2023-06-19T15:03:24Z
dc.date.available2023-06-19T15:03:24Z
dc.date.issued2015
dc.description© Copyright 2016 IEEE. Spanish Conference Electron Devices (CDE) (10th. 2015. Aranjuez/Spain). The work is supported by the Spanish Ministerio de Ciencia e Innovación, projects RUE (CSD2009-00046), CAVE (TEC2012-38247) and TEC2010-18051, and FPI grant (BES-2011-043798). The authors acknowledge Ms. María del Carmen Sabido and Ms. Alicia Fraile Chamizo for technical assistance.
dc.description.abstractThermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd_(2)O_(3) dielectric layer have lower leakage current and a more stable behavior during thermal treatment processes compared with conventional devices. In fact, an excellent on/off ratio of about 108 and a stable V_(t) is observed after storage at high temperature. The beneficial effects of Gd_(2)O_(3) on trapping effects of MOS-HEMTs are also dis-cussed.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipSpanish Ministerio de Ciencia e Innovación
dc.description.sponsorshipCAVE
dc.description.sponsorshipFPI
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/39022
dc.identifier.doi10.1109/cde.2015.7087508
dc.identifier.issn2163-4971
dc.identifier.officialurlhttp://dx.doi.org/10.1109/cde.2015.7087508
dc.identifier.relatedurlhttp://ieeexplore.ieee.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/35230
dc.journal.titleProceedings of the of the 2015 10th spanish conference on electron devices
dc.language.isoeng
dc.page.initial78
dc.publisherIEEE
dc.relation.projectIDCSD2009-00046
dc.relation.projectIDTEC2012-38247
dc.relation.projectIDTEC2010-18051
dc.relation.projectIDBES-2011-043798
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordAlGaM/GaN
dc.subject.keywordGd2O3
dc.subject.keywordHEMTs
dc.subject.keywordMOS-HEMTs
dc.subject.keywordThermal stability
dc.subject.keywordHig-k dielectric.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleThermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
dc.typejournal article
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