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Statistical anomalies of bitflips in SRAMs to discriminate MCUs from SEUs

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dc.book.title15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 2015
dc.conference.date14/09/2015-18/09/2015
dc.conference.placeMoscow (Russia)
dc.conference.title2015 IEEE European Conferences on Radiation Effecs on Component and Systems (RADECS2015)
dc.contributor.authorClemente Barreira, Juan Antonio
dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorVilla, Francesca
dc.contributor.authorRey, Sole
dc.contributor.authorBaylac, Maud
dc.contributor.authorMecha López, Hortensia
dc.contributor.authorAgapito Serrano, Juan Andrés
dc.contributor.authorPuchner, Helmut
dc.contributor.authorHubert, Guillaume
dc.contributor.authorVelazco, Raoul
dc.date.accessioned2023-06-18T07:13:37Z
dc.date.available2023-06-18T07:13:37Z
dc.date.issued2015-09-18
dc.description©IEEE 2015 European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015) (15. 2015. Moscú). Date of Conference: 14-18 Sept. 2015
dc.description.abstractThis paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving radiation tests with 14-MeV neutrons on two successive generations (130 and 90 nm) of Cypress devices are presented.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.departmentDepto. de Arquitectura de Computadores y Automática
dc.description.facultyFac. de Ciencias Físicas
dc.description.facultyFac. de Informática
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Economía y Competitividad (MINECO)
dc.description.sponsorshipUCM-BSCH
dc.description.sponsorshipPrograma "José Castillejo" para movilidad de profesores
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/34217
dc.identifier.doi10.1109/RADECS.2015.7365670
dc.identifier.isbn978-1-5090-0232-0
dc.identifier.officialurlhttp://dx.doi.org/10.1109/RADECS.2015.7365670
dc.identifier.relatedurlhttp://www.radecs2015.org
dc.identifier.relatedurlhttp://ieeexplore.ieee.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/24710
dc.language.isoeng
dc.page.final510
dc.page.initial507
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc
dc.relation.projectIDAYA2009-13300-C03-03
dc.relation.projectIDAYA2009-13300-C03-02
dc.relation.projectIDTIN2013-40968-P
dc.rights.accessRightsopen access
dc.subject.cdu537.8
dc.subject.cdu539.16
dc.subject.cdu621.3.049.77
dc.subject.keywordSRAMs
dc.subject.keywordSingle event upsets
dc.subject.keywordMultiple cell upsets
dc.subject.keywordNeutron tests
dc.subject.ucmElectrónica (Física)
dc.subject.ucmRadiactividad
dc.subject.ucmCircuitos integrados
dc.subject.unesco2203.07 Circuitos Integrados
dc.titleStatistical anomalies of bitflips in SRAMs to discriminate MCUs from SEUs
dc.title.alternativeAnomalías estadísticas de los bits corruptos en memorias estáticas de acceso aleatorio para distinguir eventos múltiples de simples.
dc.typebook part
dcterms.references[1] R. Velazco and F. J. Franco, “Single Event Effects on Digital Integrated Circuits: Origins and Mitigation Techniques,” in IEEE International Symposium on Industrial Electronics (ISIE), pp. 3322–3327, June 2007. [2] M. Wirthlin, D. Lee, G. Swift, and H. Quinn, “A Method and Case Study on Identifying Physically Adjacent Multiple-Cell Upsets Using 28-nm, Interleaved and SECDED-Protected Arrays,” IEEE Tran. Nucl. Sci., vol. 61, pp. 3080–3087, Dec 2014. [3] F. Villa, M. Baylac, S. Rey, O. Rossetto, W. Mansour, P. Ramos, R. Velazco, and G. Hubert, “Accelerator-Based Neutron Irradiation of Integrated Circuits at GENEPI2 (France),” in 2014 IEEE Radiation Effects Data Workshop (REDW), pp. 1–5, July 2014. [4] J. Beaucour, J. Segura-Ruiz, R. Cubitt, B. Giroud, E. Capria, E. Mitchell, C. Curfs, J. Royer, M. Baylac, F. Villa, and S. Rey, “Grenoble Large Scale Facilities for Advanced Characterization of Microelectronics Devices,” in 2015 IEEE Conference on Radiation Effects on Components and Systems (RADECS), p. (pending of publication), Sept 2015. [5] R. Velazco, J. A. Clemente, G. Hubert, W. Mansour, C. Palomar, F. J. Franco, M. Baylac, S. Rey, O. Rosetto, and F. Villa, “Evidence of the Robustness of a COTS Soft-Error Free SRAM to Neutron Radiation,” IEEE Tran. Nucl. Sci., vol. 61, pp. 3103–3108, Dec 2014.
dspace.entity.typePublication
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relation.isAuthorOfPublication662ba05f-c2fc-4ad7-9203-36924c80791a
relation.isAuthorOfPublication2363ed06-f92b-4c10-bd9a-87ac2fcce006
relation.isAuthorOfPublication.latestForDiscovery919b239d-a500-4adb-aacf-00206a2c1512

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