Aviso: para depositar documentos, por favor, inicia sesión e identifícate con tu cuenta de correo institucional de la UCM con el botón MI CUENTA UCM. No emplees la opción AUTENTICACIÓN CON CONTRASEÑA
 

Limitations of high pressure sputtering for amorphous silicon deposition

Simple item page
dc.contributor.authorGarcía Hernansanz, Rodrigo
dc.contributor.authorGarcía Hemme, Eric
dc.contributor.authorMontero Álvarez, Daniel
dc.contributor.authorOlea Ariza, Javier
dc.contributor.authorSan Andrés Serrano, Enrique
dc.contributor.authorPrado Millán, Álvaro Del
dc.contributor.authorFerrer, F. J.
dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGonzález Díaz, Germán
dc.date.accessioned2023-06-18T06:56:41Z
dc.date.available2023-06-18T06:56:41Z
dc.date.issued2016-03
dc.description© 2016 IOP Publishing Ltd. Authors would like to acknowledge the CAI de Técnicas Físicas and C.A.I de Espectroscopía of the Universidad Complutense de Madrid for the use of its laboratories and FTIR measurements. This work was partially supported by the Project MADRID-PV (Grant No. 2013/MAE-2780) funded by the Comunidad de Madrid, by the Spanish MINECO (Ministerio de economía y competitividad) under grant TEC 2013-41730-R and by the Universidad Complutense de Madrid (Programa de Financiación de Grupos de Investigación UCM–Banco Santander) under grant 910173-2014. D. Montero acknowledges the Spanish MINECO (Ministerio de economía y competitividad) for financial support under contract BES-2014-067585
dc.description.abstractAmorphous silicon thin films were deposited using the high pressure sputtering (HPS) technique to study the influence of deposition parameters on film composition, presence of impurities, atomic bonding characteristics and optical properties. An optical emission spectroscopy (OES) system has been used to identify the different species present in the plasma in order to obtain appropriate conditions to deposit high purity films. Composition measurements in agreement with the OES information showed impurities which critically depend on the deposition rate and on the gas pressure. We prove that films deposited at the highest RF power and 3.4 × 10^−2 mbar, exhibit properties as good as the ones of the films deposited by other more standard techniques.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Economía y Competitividad (MINECO)
dc.description.sponsorshipComunidad de Madrid
dc.description.sponsorshipPrograma de Financiación de Grupos de Investigación UCM–Banco Santander
dc.description.sponsorshipUniversidad Complutense de Madrid (UCM)
dc.description.sponsorshipBanco Santander Central Hispano (BSCH)
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/39309
dc.identifier.doi10.1088/2053-1591/3/3/036401
dc.identifier.issn2053-1591
dc.identifier.officialurlhttp://dx.doi.org/10.1088/2053-1591/3/3/036401
dc.identifier.relatedurlhttp://iopscience.iop.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/24641
dc.issue.number3
dc.journal.titleMaterials research express
dc.language.isoeng
dc.publisherIOP Publishing
dc.relation.projectIDTEC 2013-41730-R
dc.relation.projectIDMADRID-PV (2013/MAE-2780)
dc.relation.projectID910173-2014
dc.relation.projectIDBES-2014-067585
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordHigh pressure sputtering
dc.subject.keywordHydrogenated amorphous silicon
dc.subject.keywordHigh deposition rate.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleLimitations of high pressure sputtering for amorphous silicon deposition
dc.typejournal article
dc.volume.number3
dcterms.references1.- Zhang R, Chen X Y, Zhang K and Shen W Z 2006 J. Appl. Phys. 100 104310. 2.- Tsunomura Y, Yoshimine Y, Taguchi M, Baba T, Kinoshita T, Kanno H, Sakata H and Tanaka M 2009 Sol. Energy Mater. Sol. Cell 93 670. 3.- Kim D Y, Kim I S and Choi S Y 2009 Sol. Energy Mater. Sol. Cell 93 239. 4.- Jagannathan B, Anderson W A and Coleman J 1997 Sol. Energy Mater. Sol. Cell 46 289. 5.- Chapman B 1980 Glow Discharge Processes (New-York NY: J. Wiley). 6.- Toledano-Luque M, San Andrés E, del Prado A, Mártil I, González-Díaz G, Martínez F L, Bohne W, Röhrich J and Strub E 2007 J. Appl. Phys. 102 044106. 7.- Westwood W and Mattox D 1977 Sputtering (New-York NY: AVS). 8.- Poppe U, Schubert J, Arons R R and Evers W, Freiburg C, Reichert W, Schmidt K, Sybertz W and Urban K 1988 Solid State Commun. 66 661–5. 9.- Faley M I, Mi S B, Petraru A, Jia C L, Poppe U and Urban K 2006 Appl. Phys. Lett. 89 082507. 10.- Feijoo P C, Pampillón M A and San Andrés E 2015 Thin Solid Films 593 62. 11.- Pampillón M A, Feijoo P C, San Andrés E, García H, Castán H and Dueñas S 2015 Semicond. Sci. Technol. 30 035023. 12.- Pampillón M A, Cañadilla C, Feijoo P C, San Andrés E and del Prado A 2013 J. Vac. Sci. Technol. B 31 01A115. 13.- Nafarizal N and Sasaki K 2012 J. Phys. D: Appl. Phys. 45 505202. 14.- Hernandez-Rojas J L, Lucía M L, Mártil I, González-Díaz G, Santamaría J and Sánchez-Quesada F 1992 Appl. Optics 31 1606. 15.- Pearse R W B and Gaydon A G 1976 The identification of Molecular Spectra (London: Chapman and Hall). 16.- Martínez F L, San Andrés E, del Prado A, Mártil I, Bravo D and López F J 2001 J. Appl. Phys. 90 3. 17.- Mahan A H, Gedvilas L M and Webb J D 2000 J. Appl. Phys. 87 1650. 18.- Rong-Hwei Y, Tai-Rong Y, Te-Cheng C, Shih-Yung L and Jyh-Wong H 2008 IEEE Trans. Electron Devices 55 978. 19.- Kilper T et al 2009 J. Appl. Phys. 105 074509. 20.- Umrath W 1998 Fundamentals of Vacuum Technology. 21 Bogaerts A, Gijbels R and Serikov V 2000 J. Appl. Phys. 87 8334–44. 22.- Meddeb H, Bearda T, Abdelraheem Y, Ezzaouia H, Gordon1 I, Szlufcik J and Poortmans J 2015 J. Phys. D: Appl. Phys. 48 415301. 23.- Tauc J, Grigorov R and Vancu A 1966 Phys. Status Solidi 15 627. 24.- Giorgis F, Pirri C F, Tresso E, Rigato V, Zandolin S and Rava P 1997 Physica B 229 233. 25.- Cody G D, Brooks B G and Abeles B 1982 Sol. Energy Mater. 8 231
dspace.entity.typePublication
relation.isAuthorOfPublication838d6660-e248-42ad-b8b2-0599f3a4542b
relation.isAuthorOfPublication765f38c4-71cb-441b-b2a8-d88c5cdcf086
relation.isAuthorOfPublication1c0ebe96-b6cf-43ed-b521-544593e33095
relation.isAuthorOfPublication12efa09d-69f7-43d4-8a66-75d05b8fe161
relation.isAuthorOfPublication21e27519-52b3-488f-9a2a-b4851af89a71
relation.isAuthorOfPublication7a3a1475-b9cc-4071-a7d3-fbf68fe1dce0
relation.isAuthorOfPublication6db57595-2258-46f1-9cff-ed8287511c84
relation.isAuthorOfPublicationa5ab602d-705f-4080-b4eb-53772168a203
relation.isAuthorOfPublication.latestForDiscovery838d6660-e248-42ad-b8b2-0599f3a4542b

Download

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
González-Díez 02 postp.pdf
Size:
1.79 MB
Format:
Adobe Portable Document Format
downoload Download

Collections

Artículos