Limitations of high pressure sputtering for amorphous silicon deposition
Loading...
Official URL
Full text at PDC
Publication date
2016
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
IOP Publishing
Citations
Exportar
Citation
1.- Zhang R, Chen X Y, Zhang K and Shen W Z 2006 J. Appl. Phys. 100 104310.
2.- Tsunomura Y, Yoshimine Y, Taguchi M, Baba T, Kinoshita T, Kanno H, Sakata H and Tanaka M 2009 Sol. Energy Mater. Sol. Cell 93 670.
3.- Kim D Y, Kim I S and Choi S Y 2009 Sol. Energy Mater. Sol. Cell 93 239.
4.- Jagannathan B, Anderson W A and Coleman J 1997 Sol. Energy Mater. Sol. Cell 46 289.
5.- Chapman B 1980 Glow Discharge Processes (New-York NY: J. Wiley).
6.- Toledano-Luque M, San Andrés E, del Prado A, Mártil I, González-Díaz G, Martínez F L, Bohne W, Röhrich J and Strub E 2007 J. Appl. Phys. 102 044106.
7.- Westwood W and Mattox D 1977 Sputtering (New-York NY: AVS).
8.- Poppe U, Schubert J, Arons R R and Evers W, Freiburg C, Reichert W, Schmidt K, Sybertz W and Urban K 1988 Solid State Commun. 66 661–5.
9.- Faley M I, Mi S B, Petraru A, Jia C L, Poppe U and Urban K 2006 Appl. Phys. Lett. 89 082507.
10.- Feijoo P C, Pampillón M A and San Andrés E 2015 Thin Solid Films 593 62.
11.- Pampillón M A, Feijoo P C, San Andrés E, García H, Castán H and Dueñas S 2015 Semicond. Sci. Technol. 30 035023.
12.- Pampillón M A, Cañadilla C, Feijoo P C, San Andrés E and del Prado A 2013 J. Vac. Sci. Technol. B 31 01A115.
13.- Nafarizal N and Sasaki K 2012 J. Phys. D: Appl. Phys. 45 505202.
14.- Hernandez-Rojas J L, Lucía M L, Mártil I, González-Díaz G, Santamaría J and Sánchez-Quesada F 1992 Appl. Optics 31 1606.
15.- Pearse R W B and Gaydon A G 1976 The identification of Molecular Spectra (London: Chapman and Hall).
16.- Martínez F L, San Andrés E, del Prado A, Mártil I, Bravo D and López F J 2001 J. Appl. Phys. 90 3.
17.- Mahan A H, Gedvilas L M and Webb J D 2000 J. Appl. Phys. 87 1650.
18.- Rong-Hwei Y, Tai-Rong Y, Te-Cheng C, Shih-Yung L and Jyh-Wong H 2008 IEEE Trans. Electron Devices 55 978.
19.- Kilper T et al 2009 J. Appl. Phys. 105 074509.
20.- Umrath W 1998 Fundamentals of Vacuum Technology.
21 Bogaerts A, Gijbels R and Serikov V 2000 J. Appl. Phys. 87 8334–44.
22.- Meddeb H, Bearda T, Abdelraheem Y, Ezzaouia H, Gordon1 I, Szlufcik J and Poortmans J 2015 J. Phys. D: Appl. Phys. 48 415301.
23.- Tauc J, Grigorov R and Vancu A 1966 Phys. Status Solidi 15 627.
24.- Giorgis F, Pirri C F, Tresso E, Rigato V, Zandolin S and Rava P 1997 Physica B 229 233.
25.- Cody G D, Brooks B G and Abeles B 1982 Sol. Energy Mater. 8 231
Abstract
Amorphous silicon thin films were deposited using the high pressure sputtering (HPS) technique to study the influence of deposition parameters on film composition, presence of impurities, atomic bonding characteristics and optical properties. An optical emission spectroscopy (OES) system has been used to identify the different species present in the plasma in order to obtain appropriate conditions to deposit high purity films. Composition measurements in agreement with the OES information showed impurities which critically depend on the deposition rate and on the gas pressure. We prove that films deposited at the highest RF power and 3.4 × 10^−2 mbar, exhibit properties as good as the ones of the films deposited by other more standard techniques.
Description
© 2016 IOP Publishing Ltd.
Authors would like to acknowledge the CAI de Técnicas Físicas and C.A.I de Espectroscopía of the Universidad Complutense de Madrid for the use of its laboratories and FTIR measurements. This work was partially supported by the Project MADRID-PV (Grant No. 2013/MAE-2780) funded by the Comunidad de Madrid, by the Spanish MINECO (Ministerio de economía y competitividad) under grant TEC 2013-41730-R and by the Universidad Complutense de Madrid (Programa de Financiación de Grupos de Investigación UCM–Banco Santander) under grant 910173-2014. D. Montero acknowledges the Spanish MINECO (Ministerio de economía y competitividad) for financial support under contract BES-2014-067585