Cathodoluminescence study of semiconductor oxide micro- and nanostructures grown by vapor deposition

Abstract

starting SnO_2, powder. In-rich nanoislands were found to grow on some edges of the tubes. ZnO nanostructures doped with Sri or Eu were grown by adding SnO_2 and Eu(2)O(3) powder, respectively, to the ZnO precursor powder. All the samples have been characterized by the emissive and cathodoluminescence (CL) modes of scanning electron microscopy. CL images from SnO_2:In and In_2O_3:Sn tubes and islands show a higher emission from the Sn-rich structures related to oxygen deficiency. CL of doped ZnO enables to detect the presence of dopant in specific regions or structures. CL appears to be a useful technique to study optical and electronic properties of semiconductor Oxide nanostructures.