Electronic-structure of fibonacci Si δ-doped GaAs
dc.contributor.author | Domínguez-Adame Acosta, Francisco | |
dc.contributor.author | Maciá Barber, Enrique Alfonso | |
dc.contributor.author | Méndez Martín, María Bianchi | |
dc.date.accessioned | 2023-06-20T18:57:47Z | |
dc.date.available | 2023-06-20T18:57:47Z | |
dc.date.issued | 1994-10-31 | |
dc.description | © Elsevier Science BV. The authors thank A. Sánchez for a critical reading of the manuscript. This work has been partially supported by Univeridad Complutense under project PR161/93-4811. | |
dc.description.abstract | We study the electronic structure of a new type of Fibonacci superlattice based on Si delta-doped GaAs. Assuming that delta-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to delta-doping is obtained by means of the Thomas-Fermi approach. The resulting energy spectrum is then found by solving the corresponding effective-mass wave equation. We find that a self-similar spectrum can be seen in the band structure. Electronic transport properties of samples are also discussed and related to the degree of spatial localization of electronic envelope functions. | |
dc.description.department | Depto. de Física de Materiales | |
dc.description.faculty | Fac. de Ciencias Físicas | |
dc.description.refereed | TRUE | |
dc.description.sponsorship | Universidad Complutense | |
dc.description.status | pub | |
dc.eprint.id | https://eprints.ucm.es/id/eprint/25164 | |
dc.identifier.doi | 10.1016/0375-9601(94)90295-X | |
dc.identifier.issn | 0375-9601 | |
dc.identifier.officialurl | http://dx.doi.org/10.1016/0375-9601(94)90295-X | |
dc.identifier.relatedurl | http://www.sciencedirect.com/ | |
dc.identifier.relatedurl | http://arxiv.org/abs/cond-mat/9409073 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14352/59007 | |
dc.issue.number | 3 | |
dc.journal.title | Physics Letters A | |
dc.language.iso | eng | |
dc.page.final | 190 | |
dc.page.initial | 184 | |
dc.publisher | Elsevier Science BV | |
dc.relation.projectID | PR161/93-4811 | |
dc.rights.accessRights | restricted access | |
dc.subject.cdu | 538.9 | |
dc.subject.keyword | Quasi-Periodic Lattices | |
dc.subject.keyword | One Dimension | |
dc.subject.keyword | Superlattice | |
dc.subject.ucm | Física de materiales | |
dc.title | Electronic-structure of fibonacci Si δ-doped GaAs | |
dc.type | journal article | |
dc.volume.number | 194 | |
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