Electronic-structure of fibonacci Si δ-doped GaAs
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1994
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Elsevier Science BV
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Abstract
We study the electronic structure of a new type of Fibonacci superlattice based on Si delta-doped GaAs. Assuming that delta-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to delta-doping is obtained by means of the Thomas-Fermi approach. The resulting energy spectrum is then found by solving the corresponding effective-mass wave equation. We find that a self-similar spectrum can be seen in the band structure. Electronic transport properties of samples are also discussed and related to the degree of spatial localization of electronic envelope functions.
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© Elsevier Science BV.
The authors thank A. Sánchez for a critical reading of the manuscript. This work has been partially supported by Univeridad Complutense under project PR161/93-4811.