Inducción de sucesos aislados en memoria SRAM (Induced single events in SRAMs)
| dc.contributor.advisor | Franco, Francisco J. | |
| dc.contributor.author | Palomar Trives, Carlos | |
| dc.date.accessioned | 2023-06-20T06:13:04Z | |
| dc.date.available | 2023-06-20T06:13:04Z | |
| dc.date.issued | 2012-06 | |
| dc.description | Máster en Física Aplicada. Facultad de Ciencias Físicas.Curso 2011-2012 | |
| dc.description.abstract | Este proyecto consiste en emular los errores producidos en memorias semiconductoras por la radiación atmosférica mediante un láser pulsado que actúa de modo semejante a un ión. Se realiza un mapa de sensibilidad de la memoria identificando los puntos susceptibles de error y cuántos errores simultáneos se producen. Para ello es necesario realizar pasos muy delicados como desencapsular la memoria, construir placas de test tanto para el circuito examinado como para el sistema de caracterización, conseguir, mediante obturadores, la incidencia de un único pulso sobre la memoria, diseñar un sistema de adquisición de datos, fijar la energía y camino óptico del láser pulsado así como controlar de manera automática la posición en el plano XY donde incide el láser. Los resultados muestran que algunas zonas de la memoria son insensibles al láser en tanto que otras tienen una sensibilidad extremadamente alta. Por otra parte, se observa la existencia de dos tipos distintos de errores, uno llamado Single Event Upset (SEU) y, otro menos habitual, llamado Single Event Micro-latchup. [ABSTRACT] This project is to emulate the errors in semiconductor memories for atmospheric radiation by pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors occur simultaneously. This requires very delicate steps, like unencapsulate memory, build test boards for the studied circuit and the characterization system, getting, through shutters, the incidence of a single pulse on memory, design an acquisition system data, set the energy laser and laser optical path and automatically controlling the position in the XY plane where the laser hits. The results show that some memory zones are insensitive to the laser while others have an extremely high sensitivity. Moreover, two distinct types of errors are observed, one called Single Event Upset (SEU) and other less common, called Single Event Micro-latchup. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.status | unpub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/17205 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/46522 | |
| dc.language.iso | spa | |
| dc.page.total | 46 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 621.38 | |
| dc.subject.keyword | Memoria | |
| dc.subject.keyword | Circuito | |
| dc.subject.keyword | Radiación | |
| dc.subject.keyword | Láser | |
| dc.subject.keyword | Single Event Effect | |
| dc.subject.keyword | Single Event Upset | |
| dc.subject.keyword | Múltiple Bit Upset | |
| dc.subject.keyword | Latch Up | |
| dc.subject.keyword | Sensibilidad | |
| dc.subject.keyword | Memory | |
| dc.subject.keyword | Circuit | |
| dc.subject.keyword | Radiation | |
| dc.subject.keyword | Laser | |
| dc.subject.keyword | Efecto Puntual | |
| dc.subject.keyword | Suceso Aislado | |
| dc.subject.keyword | Suceso Aislado Múltiple | |
| dc.subject.keyword | Sensitivity. | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.title | Inducción de sucesos aislados en memoria SRAM (Induced single events in SRAMs) | |
| dc.type | master thesis | |
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