Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells

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In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at,photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage.
© 2013 The Japan Society of Applied Physics. This work has been supported by the Regional Government of Comunidad de Madrid within the project NUMANCIA II (S-2009/ENE-1477). J. Olea and D. Pastor would like to acknowledge a Juan de la Cierva fellowship from the Spanish Science Ministry (JCI-2011-10402, JCI-2011-11471). E. Antolín acknowledges a Marie Curie Fellowship from the European Commission (Project Siracusa, Grant PIEF-GA-2011-302489). The authors would like also to acknowledge the C.A.I. de Técnicas Físicas for the ion implantation experiments and Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements.
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