Using optimization techniques to characterize irradiated CMOS analog switches

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dc.book.titleRadiation Effects on Components and Systems: RADECS, 2004: Proceedings: 5th RADESC Workshop, Madrid (Spain), 22-24 September 2004
dc.conference.date22/09/2004-24/09/2004
dc.conference.placeMadrid (Spain)
dc.conference.title2004 Radiation Effects on Components and Systems Works
dc.contributor.authorZong, Yi
dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorAgapito Serrano, Juan Andrés
dc.date.accessioned2023-06-20T13:41:28Z
dc.date.available2023-06-20T13:41:28Z
dc.date.issued2004-09-22
dc.descriptionRadiation Effects on Components and Systems (RADECS 2004) (5. 2004. Madrid) This work was supported by the cooperation agreement K746/LHC between CERN & UCM, by the Spanish Research Agency CICYT (FPA2002-00912) and partially supported by Instituto Tecnológico e Nuclear of Portugal.
dc.description.abstractThe use of mathematical optimization techniques allows estimating the degradation of the internal components of irradiated CMOS analog switches from their nonlinear resistance and the value of leakage currents at different power supplies voltages.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Educación y Ciencia
dc.description.sponsorshipCERN
dc.description.sponsorshipPortuguese Research Agency (ICCTI)
dc.description.sponsorshipCICYT
dc.description.sponsorshipUniversidad Complutense de Madrid
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/29022
dc.identifier.isbn84-930056-1-4
dc.identifier.relatedurlhttp://www.inta.es
dc.identifier.urihttps://hdl.handle.net/20.500.14352/53399
dc.journal.titleProceedings of the 2004 Radiation Effects on Components and Systems Workshop
dc.language.isoeng
dc.page.final285
dc.page.initial279
dc.page.total7
dc.publication.placeMadrid
dc.publisherINTA
dc.relation.projectIDFPA2002-00912
dc.relation.projectIDK476/LHC
dc.rights.accessRightsopen access
dc.subject.cdu537.8
dc.subject.keywordAnalog switches
dc.subject.keywordCOTS
dc.subject.keywordNeutron effects
dc.subject.keywordOptimization
dc.subject.keywordTID effects.
dc.subject.ucmElectrónica (Física)
dc.subject.ucmRadiactividad
dc.titleUsing optimization techniques to characterize irradiated CMOS analog switches
dc.typebook part
dcterms.references[1] P. Horowittz, W. Hill "The Art of Electronics. 2 nd Edition". Cambridge University Press, United States of America, 1990. [2] D. A. Neamen, "Semiconductor Physics and Devices. Basic Principles", Richard D. Irwin, Inc., United States of America, 1992. [3] A.C. Fernandes, I.C. Gonçalves, J.G. Marques, J. Santos, A.J.G. Ramalho, M. Osvay. "Mixed-field dosimetry of a fast neutron beam at the Portuguese Research Reactor for the irradiation of electronic circuits -- measurements and calculations", Proc. 11th Intl. Symp. on Reactor Dosimetry, Brussels, 19-23 Aug. 2002, J. Wagemans, A. Abdherrahim, P. D'Hondt, C. De Raedt (Eds.), World Scientific, Singapore, 2003, pp. 143-149. [4] S. Kerns et alt. " The Design of Radiation-Hardened ICs for Space: A Compendium of Approaches", Proceedings of the IEEE, vol. 76, no 11, November 1988, pp. 1470-1509 [5] J. R. Srour and J. M. McGarrity "Radiation Effects on Microelectronics in Space", Proceedings of the IEEE, Vol. 76, no. 11, November 1988, pp.1443-1469 [6] P.E.Gill, W.Murray, and M.H. Wright "Practical Optimization. 8th Printing", Standford University, California, USA,1989, pp. 134-136
dspace.entity.typePublication
relation.isAuthorOfPublication662ba05f-c2fc-4ad7-9203-36924c80791a
relation.isAuthorOfPublication.latestForDiscovery662ba05f-c2fc-4ad7-9203-36924c80791a

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