Structural characterisation of (11(2)over-bar0) 4H-SiC substrates by cathodoluminescence and X-ray topography

Abstract

Silicon Carbide (SiC) is a wide band gap semiconductor, having opto-electronic properties that are suitable for many applications. Some structural defects due to crystal growth and/or doping technologies are commonly present in the substrates of SiC. The (11 (2) over bar0)-oriented 4H-SiC bulk wafers are particularly investigated, due to some advantages with respect to the (0001)-Si face. One of these advantages is a better crystal reordering during post-implantation annealing. In this paper cathodoluminescence (CL) and X-Ray topography measurements have been carried out in order to investigate the optical and structural properties of commercial (11 (2) over bar0) 4H n(+)-type substrates.