Publication: Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films
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Amer Inst Physics
The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiN(x)) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy and results in a shift in the light emission peak of the quantum dots. We show that the luminescence in our structures is attributed to the quantum confinement effect. These findings give a strong indication that the quality (density and size distribution) of Si QDs can be improved by optimizing the deposition parameters which opens a route to the fabrication of an all-Si tandem solar cell.
© Amer Inst Physics. This work was supported by the French National Agency of Research (ANR) in the framework of the “Cellules photovoltaïques tandem tout silicium”-DUOSIL grant program (Grant No. ANR-06-PSPV-005). The authors would also like to thank the Rhône-Alpes region for the financial support through the PHOSIL project.