Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces

Thumbnail Image
Full text at PDC
Publication Date
Advisors (or tutors)
Journal Title
Journal ISSN
Volume Title
IEEE- Inst. Electrical Electronics Engineers Inc
Google Scholar
Research Projects
Organizational Units
Journal Issue
This work presents a systematic investigation of the influence of reactive ion etching (RIE) on the microwave noise performance of GaAs Schottky diodes. A number of devices has been fabricated by making use of RIE techniques in the anode window definition. The noise temperature measurements have revealed a strong degradation of the noise performance with RIE time, but no significant changes have been observed on the barrier height. Different refinements to the fabrication process that are typically utilized to reduce the effects of RIE damage were tested. The use of thermal treatment at 400 degreesC after the RIE process was found to be the most effective procedure to remove the sources of the measured excess noise, which are attributed to anomalies in the Ga coverage at the metal-semiconductor interface.
© 2000 IEEE.
Unesco subjects
[1] S. Pang, “Surface damage on GaAs induced by reactive ion etching and sputter etching,” J. Electrochem. Soc., vol. 144, pp. 784–787, 1986. [2] T. H. Miers, “Schottky contact fabrication for GaAs MESFET’s,” J. Electrochem. Soc., vol. 129, pp. 1795–1799, 1982. [3] T. Hashizume et al., “A novel in-situ electrochemical process for defect-free Schottky barriers on GaAs and its application to quantum structure contacts,” in Proc. Int. Conf. Advanced Microelectronic Devices and Processing, 1994, pp. 549–554. [4] T. Yasui et al., “Fabrication of quasiintegrated planar Schottky barrier diodes for THz applications,” in Proc. 23rd Int. Conf. Infrared Millimeter Waves, Leeds, U.K., 1998, pp. 88–89. [5] A. Jelenski, A. Grüb, V. Krozer, and H. L. Hartnagel, “New approach to the design and the fabrication of THz Schottky barrier diodes,” IEEE Trans. Microwave Theory Tech., vol. 41, pp. 549–557, 1993. [6] C. I. Lin et al., “Substrateless Schottky diodes for THz applications,” in Proc. Eighth Int. Symp. on Space Terahertz Technology. Cambridge, MA: Harvard Univ., Mar. 1997. [7] J. M. M. Pantoja, A. Grüb, V. Krozer, and J. L. Sebastián, “Accuracy of nonoscillating one-port noise measurements,” IEEE Trans. Instrum. Meas., vol. 44, pp. 853-859, 1995. [8] A. van der Ziel, "Noise in Solid State Devices and Circuits. New York: Wiley, 1986. [9] A. Jelenski, E. Kollberg, and H. Zirath, “Broad band noise mechanisms and noise measurements of metal-semiconductor junctions,” IEEE Trans. Microwave Theory Tech., vol. MTT-34, pp. 1193–1201, 1986. [10] H. W. Hübers and H. P. Röser, “Microstructural properties of THz Schottky mixer diodes,” in Proc. 23th Int. Conf. Infrared and mm-Waves, Colchester, U.K., 1998. [11] H. Sugahara, H. Shigekawa, and Y. Nannichi, “Synchrotron radiation photoemission analysis for(NH ) S -treated GaAs,” J. Appl. Phys., vol. 69, pp. 4349-4353, 1991. [12] J. Szuber, G. Hollinger, and E. Bergignat, “Sulfide passivation of GaAs surface,” Electron. Technol., vol. 31, pp. 1–10, 1998.