Crossed Ga_2O_3/SnO_2 Multiwire Architecture: A Local Structure Study with Nanometer Resolution

Abstract

Crossed nanowire structures are the basis for high-density integration of a variety of nanodevices. Owing to the critical role of nanowires intersections in creating hybrid architectures, it has become a challenge to investigate the local structure in crossing points in metal oxide nanowires. Thus, if intentionally grown crossed nanowires are well-patterned, an ideal model to the role of impurities in the coupling formation, structural modifications, and atomic site configuration based on crossed Ga_2O_3/SnO_2 nanowires. Our experiment opens new avenues for further local structure studies with both nanometer resolution and elemental sensitivity.