Cathodoluminescence study of GaN epitaxial layers
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1996
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American Institute of Physics
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Abstract
GaN epitaxial layers have been investigated by cathodoluminescence (CL) in the scanning electron microscope (SEM). The most prominent feature of the spectra is a complex band at 2.2 eV, whose evolution with temperature and excitation density suggests emission mechanisms involving a deep center and donor-donor or donor-acceptor pairs. Time resolved photoluminescence (TRPL) measurements confirm the involvement of a deep center in the emission. CL images reveal that the centers responsible for this emission decorate grain boundaries. Emission bands al 2.87 eV and 1.31 eV have been also detected in the films.
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© 1996 - Elsevier Science S.A..
International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 96) (4. 1996. El Escorial, España).
A. Cremades thanks the Universidad Complutense for a predoctoral grant. This work has been partially supported by DGICYT Projects No. HP95-98B and PB93- 1256.