Analysis of the far ultraviolet silicon lines in G dwarf stars

Abstract

The structure of the outer stellar regions is investigated for four G type dwarfs observed with the IUE satellite. Line fluxes of the Si II lines at 1817 Å, 1808 A, and 1309 Å and Si III at 1206 Å are used to obtain temperatures and electronic densities. A temperature of 16,000 K is found from the lines at 1817 Å and 1808 Å, 26,000 K from the 1309 A line and 50,000 K from that at 1206 A. Predicted fluxes are compared with the observed ones. The significance of the results is discussed in terms of line formation regions.