Study of growth hillocks in GaN : Si films by electron beam induced current imaging

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Zaldivar, M.H.
Piqueras de Noriega, Javier
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American Institute of Physics
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Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in Si doped GaN films. REBIC bright-dark contrast has been observed in the border of growth, round or pyramidal, hillocks, while pyramidal hillocks also show bright contrast at the center. The results are explained by the inhomogeneous distribution of charged point defects and impurities at the hillocks.
© 2001 American Institute of Physics. This work was supported by MCYT-DGI (Project No. MAT2000-2119). M.H.Z. thanks AECI and CoNaCyT for a research grant.
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