High Quality Ti-Implanted Si Layers Above Solid Solubility Limit
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2009
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IEEE
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Abstract
In this work we report the successful doping of Si with Ti at doses beyond the Mott limit for this element keeping high lattice quality. Ti implantation in Si at high doses and subsequent Pulsed-Laser Melting (PLM) annealing have been performed. Time-of-Flight Secondary Ion Mass Spectroscopy (SIMS) measurements confirm that Ti concentration exceed the Mott limit in the implanted layer, and Glancing Incidence X-Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM) measurements prove that good crystallinity can be achieved over solid solubility limit. Hall effect characterization points out a high electrical activation and high mobility in all samples.
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Spanish Conference on Electron Devices (7.2009.Santiago de Compostela). © 2009 IEEE. Authors would like to acknowledge the Nanotechnology and Surface Analysis Services of the Universidad de Vigo CAC.TI. for SIMS measurements, C.A.I. de Difracción de Rayos X of the Universidad Complutense de Madrid for GIXDR measurements, C.A.I. de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation experiments and C.A.I. de Microscopía Electrónica "Luis Bru" for TEM images. This work was made possible thanks to the FPI program (Grant No. BES-2005-7065) of the Ministerio de Educación y Ciencia, and was partially supported by the Projects NUMANCIA (No. S-0505/ENE/000310) founded by the Comunidad de Madrid and GENESIS-FV (No. CSD2006-00004) funded by the Spanish Consolider National Program and by U.C.M.-C.A.M. under Grant CCG07-UCM/TIC-2804.