Uniformity characterization of SI-GaAs by cathodoluminescence and scanning electron acoustic microscopy
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1989
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IOP Publishing LTD
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Abstract
The capabilities of SEAM in uniformity assessment of SI GaAs are investigated. Profiles of SEAM signals across the wafer and SEAM images of dislocation distribution are obtained. Part of the nonlinear signal shows a profile that is not related to dislocation distribution.
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© IOP Publishing LTD.
Conference on Microscopy of Semiconducting Materials (1989. Oxford)