Physical properties of high pressure reactively sputtered TiO2

Abstract

We present a study of the physical properties of TiO2 thin films deposited at 200 degrees C on Si by high pressure reactive sputtering, a nonconventional deposition method. Just after deposition, the TiO2 films were in situ annealed in the deposition chamber at temperatures between 600 and 900 degrees C in O-2 atmosphere. Morphological, compositional, structural and electrical characterization of the samples was performed by means of several techniques, including transmission electron microscopy, heavy-ion elastic recoil detection analysis, infrared spectroscopy, x-ray and electron diffraction and capacitance-voltage measurements. Microscopy images show that the TiO2 films are polycrystalline, and that a SiO2 film spontaneously grows at the TiO2/Si interface. The unannealed TiO2 films are oxygen rich, as shown by compositional measurements. By annealing this oxygen excess is released. For temperatures above 600 degrees C the TiO2 films are stoichiometric. Infrared spectroscopy and diffraction measurements show that as-deposited films are a mixture of anatase and rutile grains. During annealing there is a phase transformation, and at 900 degrees C the anatase phase disappears and only the rutile phase is found. The relative dielectric permittivity of the TiO2 film is calculated from capacitance-voltage measurements, and very high. values in the 88-102 range are obtained.